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silicon carbide ups

72 Technology focus: Silicon carbide Benefits and

2017-5-24 · such as silicon carbide (SiC) and gallium nitride (GaN). Among these, 4H-type SiC is the most currently cited, and many researchers believe that it will play a very important role in the future of electronics because it shows great potential in power electronics devices. Interest in silicon carbide has increased greatly over

26 Silicon Carbide in Automotive

2014-5-29 · Silicon Carbide in Automotive Some of the first markets to use SiC include the server, industrial, telecom, lighting, and induction heating power supply markets. Since then, SiC has also penetrated the solar, UPS inverter, drives, and avionics markets. Most recently, SiC power components have begun to permeate automotive appliions such as

ON Semiconductor

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power

LSIC1MO170E1000 Series - SiC MOSFETs Silicon …

Find LSIC1MO170E1000 Series SiC MOSFETs part specifiions and more from the Littelfuse Silicon Carbide selection of Power Semiconductors.

Silicon Carbide Power Devices - Semelab | Mouser

2019-4-22 · Semelab''s SML05SC06D3A offers a Silicon Carbide Ultra Fast Recovery Power Rectifier in a hermetic ceramic surface mount package that has a peak repetitive reverse voltage of 600 V and an average forward current rating of 5.0 A. This package is a drop-in replacement for the D-5B or E …

SiC Schottky Diodes

2016-10-21 · ST’s silicon carbide diodes range from 600 to 1200 V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved V F.Available in a wide variety of packages, from D²PAK to TO-247 and the insulated TO-220AB/AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market.

MITSUBISHI ELECTRIC News Releases Mitsubishi …

2019-2-19 · Tokyo, July 9, 2012 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today it that it will begin shipping samples of five kinds of power modules for home appliances and industrial equipment starting on July 31, 2012. The modules use silicon carbide (SiC), a next generation semiconductor material expected to significantly reduce power loss in diode and metal oxide …

Silicon-Carbide Enables UPS to Achieve Highest …

2017-12-13 · Mitsubishi Electric announced that the 750kVA SUMMIT Series® UPS product was recently certified by ENERGY STAR® to meet 99 percent efficiency in the double conversion operating mode. ENERGY STAR® independently certified it to save energy without sacing features or functionality. The SUMMIT Series® UPS is the first UPS to apply silicon carbide (SiC) technology.

FFSH50120A Silicon Carbide Schottky Diode

• SMPS, Solar Inverter, UPS FFSH50120A - Silicon Carbide Schottky Diode, 1200 V, 50 A Author: zbgc8c Subject: Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching

Silicon Carbide Power - WPG Americas Inc.

2013-6-13 · Silicon Carbide Power 05 Thermal Properties (Per Die) Syols Parameters Max. Units RθJC Thermal Resistance, Junction To Case 2.0 °C/W Electrical Characteristics (Per Die, T c = 25°C unless otherwise stated) Syols Parameters Test Conditions Min. Typ. Max.

Silicon Carbide Test/Evaluation Products- Richardson …

15 W Flyback Auxiliary Power Supply Board (1): 2.2 KW Bridgeless Totem-Pole PFC with SiC MOSFET (1): 20kW full bridge resonant LLC converter reference (1): 48W Auxiliary Power Supply eval board (1): 50kW 4-phase, interleaved boost converter (1): 6.6 kW Bi-Directional EV On-Board Charger (1): 60 kW Interleaved Boost Converter (1): 60W auxiliary supply with 1700V SiC MOSFET (1)

Appliions | United Silicon Carbide Inc.

Silicon Carbide (SiC) devices are widely used in Power Conversion appliions such as AC/DC power supplies, PFC and UPS. Initially, this was primarily in high performance products, but now with the demand for better efficiency SiC is making its way to standard products that are used in many computing and consumer appliions.

Silicon carbide: driving package innovation - News

2018-10-9 · Silicon Carbide: Driving Package Innovation Monday 8th October 2018 As more and more wide bandgap semiconductors reach electric vehicle markets, industry can expect rapid power module package development, reports Compound Semiconductor.

Power Semiconductor Modules | Vincotech

For example are the new silicon carbide (SiC) MOSFET technologies available from 5 different sources. especially in solar and UPS appliions, and the need to These

34 POWER MODULES Silicon Carbide Boost Power …

2013-6-20 · As an additional benefit, Silicon Carbide has a 3 times higher thermal conductivity as compared to Silicon. Together with small power losses, Silicon Carbide is an ideal material to boost power density in power modules. Volker Demuth, Head of Product Management Components, SEMIKRON, Nureerg, Germany It is been a long way for Silicon Carbide

- STMicroelectronics

ST’s silicon-carbide diodes take advantage of SiC’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage, VF.

The Game Changer UPS - Mitsubishi Electric

2017-1-10 · The Institute of Electrical and Electronics Engineers (IEEE) states silicon carbide is to the 21st centu-ry what silicon was to the 20th century. Mitsubishi Electric began development of SiC (Silicon Car-bide) semiconductors during the early 1990’s and now offers this proven technology for deployment in Mitsubishi’s UPS.

C-SiC__

2011-10-10 · The results show that a majority of the reaction–formed silicon carbide distributes in inter–layer pores and inter–bundle pores, while a minority in the inter–?ber pores. After

Uninterruptible Power Supplies | UPS Technologies

After the release of three level topology, Mitsubishi Electric pursued the next major advancement in UPS technology, Silicon Carbide (SiC). As the latest in high power semiconductor devices, SiC is the most disruptive technology in the power electronics industry since the invention of the Insulated Gate Bipolar Transistor (IGBT).

Silicon Carbide Power Devices - Semelab | Mouser

Semelab brings together the unique attributes of Silicon Carbide and the advanced capability of Semelab packaging to offer unprecedented performance

Silicon Carbide (SiC) - Infineon Technologies

2019-4-25 · The Silicon Carbide CoolSiC™ MOSFET 1200V is the leading edge solution to bring designs towards new unattainable efficiency- and power density levels. CoolSiC™ MOSFET products represent the best solution for solar, UPS and industrial drives appliions by coining best performance reliability, safety and ease of use.

Silicon Carbide (SiC) - Infineon Technologies

2019-4-25 · The Silicon Carbide CoolSiC™ MOSFET 1200V is the leading edge solution to bring designs towards new unattainable efficiency- and power density levels. CoolSiC™ MOSFET products represent the best solution for solar, UPS and industrial drives appliions by coining best performance reliability, safety and ease of use.

United Silicon Carbide Inc. | Simply More Efficient

United Silicon Carbide, Inc. (UnitedSiC) has been named one of New Jersey’s 2014 50 Fastest Growing Companies. The award program produced by NJBIZ, New Jersey’s premiere business news publiion, is presented by ParenteBeard, LLC and sponsored by Comcast Business, Mass Mutual, UnitedHealthcare, Citi and Archer & Greiner.

Silicon-Carbide Based Uninterruptible Power Supplies

2018-2-7 · Engineers (IEEE) states silicon carbide may be to the 21st century what silicon was to the 20th century [4]. The State of the Union Today With the use of conventional Si based components, double-conversion Uninterruptable Power Supplies (UPS) have characteristically been trapped in the range of 93% to 96% for operating efficiencies. In an

ON Semiconductor

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power

Compact, Single-Channel, Isolated SiC and IGBT Gate …

This Silicon Carbide (SiC) FET and IGBT gate driver reference design is a blueprint to drive the power stages of UPS, AC inverter, and electric vehicle charge pile (EV charging station) appliions. The design is based on TI’s UCC53xx 3-kVRMS basic isolated gate drivers to drive high- and low-side FETs.

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