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short note on silicon carbide introductions

SEC Filing | Cree, Inc.

2019-4-13 · Indie by check mark whether the registrant (1) has filed all reports required to be filed by Section 13 or 15(d) of the Securities Exchange Act of 1934 during the preceding 12 months (or for such shorter period that the registrant was required to file such reports), and (2) has been subject to such filing requirements for the past 90 days.

Inventions - ThoughtCo

Inventions. Get inspired with profiles and biographies of famous inventors and their inventions. Then, become an inventor yourself with our resources for transforming your ideas into consumer products.

Transistor - Wikipedia

2019-4-24 · The first working silicon transistor was developed at Bell Labs on January 26, 1954 by Morris Tanenbaum. The first commercial silicon transistor was produced by Texas Instruments in 1954. This was the work of Gordon Teal, an expert in growing crystals of …

10-K - SEC.gov | HOME

2017-10-21 · Table of Contents. FORWARD-LOOKING STATEMENTS . This Annual Report on Form 10-K contains forward-looking statements that include, but are not limited to, statements concerning projected revenues, expenses, gross profit and income and the need for additional capital. These forward-looking statements are based on our current expectations, estimates and projections about …

Light-emitting diode - Wikipedia, the free encyclopedia

2010-12-20 · Electroluminescence was discovered in 1907 by the British experimenter H. J. Round of Marconi Labs, using a crystal of silicon carbide and a ''s-whisker detector. [3] Russian Oleg Vladimirovich Losev independently created the first LED in the mid 1920s; his research was distributed in Russian, German and British scientific journals, [4] [5] but no practical use was made of the discovery …


2017-10-4 · Indie by check mark whether the registrant is a shell company (as defined in Rule 12b-2 of the Exchange Act). Yes o No ý. The aggregate market value of the registrant''s common stock, $0.01 par value per share, held by non-affiliates of the registrant on June 29, 2013, the last business day of the registrant''s most recently completed second fiscal quarter, was approximately $507.2 million

Superconductivity: A Very Short Introduction (Very …

The VSI library now contains 200 volumes—a Very Short Introduction to everything from ancient Egypt and Indian philosophy to conceptual art and cosmology—and will continue to grow to a library of around 300 titles. Very Short Introductions available now: AFRICAN HISTORY

Millennium Technologies Nickel Silicon Carbide …

In order to be able to post messages on the Polaris RZR Forum forums, you must first register. Please enter your desired user name, your email …

Home Page of Central Board of Indirect Taxes and …

In order to reduce illicit cultivation, Central Economic Intelligence Bureau (CEIB) has issued a Whatsapp No : 9868505002 for uploading of images of illicit cultivated area of opium and poppy by general public.

SEC Filing | Cree, Inc.

2019-3-24 · Our Wolfspeed segment''s products consists of silicon carbide (SiC) and gallium nitride (GaN) materials, power devices and RF devices based on silicon (Si) and wide bandgap semiconductor materials. Our materials products and power devices are used in solar, electric vehicles, motor drives, power supplies and transportation appliions.

Silicon Carbide (SiC) MOSFETs using EiceDRIVER™ - …

2019-2-18 · Advanced Gate Drive Options for Silicon-Carbide (SiC) MOSFETs using EiceDRIVER™ About this document Scope and purpose This appliion note discusses the basic parameters of silicon-carbide (SiC) MOSFETs and derives gate drive requirements. The document considers the following EiceDRIVER™ products.

Transient expression and stable transformation of …

Transient expression and stable transformation of soybean using the jellyfish green fluorescent protein silicon-carbide whiskers have proven valuable and effective alternative in which silicon

Calcium sulfate | CaSO4 - PubChem

CALCIUM SULFATE is non-coustible. Decomposes to give toxic oxides of sulfur, but only at very high temperature (>1500°C). Generally of low reactivity but may act as an oxidizing agent: incompatible with diazomethane, aluminum, and phosphorus. Certain forms of …


2003-7-16 · When you do, write that action on a post-it note, along with the page nuer that sparked it. Pile the notes in front you. Short definition of “ELECTRICITY”: is the flow of

Millennium Technologies Nickel Silicon Carbide …

In order to be able to post messages on the Polaris RZR Forum forums, you must first register. Please enter your desired user name, your email …

From Science Fiction to Industry Fact: GaN - EE Power

2019-4-18 · Forty years ago, in 1977, two major events changed the lives of many engineers: the movie “Star Wars” was released, and there was a revolution in power electronics. By 2017, we have had many Star Wars movies, many more new engineers and finally, the next revolution in power electronics. Back in the late 1970’s, the power electronics industry experienced an extraordinary and disruptive

Siyang Liu - ResearchGate

The degradations of electrical parameters for silicon carbide power MOSFETs under repetitive short-circuit (SC) stress are investigated in detail in this paper.

Light Emitting Diode or the LED TutorialBasic …

The “Light Emitting Diode” or LED as it is more commonly called, is basically just a specialised type of diode as they have very similar electrical characteristics to a PN junction diode. This means that an LED will pass current in its forward direction but block the flow of current in the reverse direction.

Rubicon Technology, Inc. (Form: S-1, Received: …

Silicon carbide is another substrate material currently used for certain LED appliions, including some that also use sapphire substrates. Special note regarding forward-looking statements

Steel - Wikipedia

2019-4-27 · Steel is an alloy of iron and carbon, and sometimes other elements.Because of its high tensile strength and low cost, it is a major component used in buildings, infrastructure, tools, ships, automobiles, machines, appliances, and weapons.. Iron is the base metal of steel. Iron is able to take on two crystalline forms (allotropic forms), body centered cubic and face centered cubic, depending on

Theses and Dissertations Available from ProQuest | …

Non-Purdue users, may purchase copies of theses and dissertations from ProQuest or talk to your librarian about borrowing a copy through Interlibrary Loan. (Some titles may also be available free of charge in our Open Access Theses and Dissertations Series, so please check there first.) Access to abstracts is unrestricted.

Appliion Considerations for Silicon Carbide MOSFETs

Appliion Considerations for Silicon Carbide MOSFETs Author: Bob Callanan, Cree, Inc. Introduction: The silicon carbide (SiC) MOSFET has unique capabilities that make it a superior switch when compared to its silicon counterparts. The advantages of SiC MOSFETs have been …

Carbide - Wikipedia

2019-4-23 · Silicon carbide has two similar crystalline forms, which are both related to the diamond structure. Boron carbide, B 4 C, on the other hand, has an unusual structure which includes icosahedral boron units linked by carbon atoms. In this respect boron carbide is similar to the boron rich borides.

AIXTRON SE''s (AIXXF) Q4 2017 Results - Earnings Call

2018-2-28 · AIXTRON SE (OTCPK:AIXXF) Q4 2017 Results Earnings Conference Call February 27, 2018 9:00 AM ET Executives Guido Pickert - VP, IR & Corporate Communiions Felix Grawert - President Bernd Schulte

Hydrogen peroxide - Wikipedia

2019-4-25 · Hydrogen peroxide is a chemical compound with the formula H 2O 2. In its pure form, it is a pale blue, clear liquid, slightly more viscous than water. Hydrogen peroxide is the simplest peroxide (a compound with an oxygen–oxygen single bond). It is used as an oxidizer, bleaching agent and antiseptic. Concentrated hydrogen peroxide, or "high

Field-effect transistor - Wikipedia

2019-4-23 · The field-effect transistor (FET) is an electronic device which uses an electric field to control the flow of current.FETs are 3-terminalled devices, having a source, gate, and drain terminal. FETs control the flow of current by the appliion of a voltage to the gate terminal, which in turn alters the conductivity between the drain and source terminals.

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