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high quality silicon carbide emitters in infrared or terahertz

Ultrabroadband Photonic Structures To Achieve High

2018-2-12 · If properly designed, terrestrial structures can passively cool themselves through radiative emission of heat to outer space. For the first time, we present a metal-dielectric photonic structure capable of radiative cooling in daytime outdoor conditions. The structure behaves as a broadband mirror for solar light, while simultaneously emitting strongly in the mid-IR within the atmospheric

List of semiconductor materials - Wikipedia

2019-4-23 · Semiconductor materials are nominally small band gap insulators.The defining property of a semiconductor material is that it can be doped with impurities that alter its electronic properties in a controllable way.. Because of their appliion in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the

List of semiconductor materials - Wikipedia

2019-4-23 · Semiconductor materials are nominally small band gap insulators.The defining property of a semiconductor material is that it can be doped with impurities that alter its electronic properties in a controllable way.. Because of their appliion in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the

Making two-photon processes dominate one-photon …

2017-12-26 · The recent discovery of nanoscale-confined phonon polaritons in polar dielectric materials has generated vigorous interest because it provides a path to low-loss nanoscale photonics at technologically important mid-IR and terahertz frequencies. In this work, we show that these polar dielectrics can be used to develop a bright and efficient spontaneous emitter of photon pairs.

Roger Howe''s Profile | Stanford Profiles

Roger Howe is part of Stanford Profiles, official site for faculty, postdocs, students and staff information (Expertise, Bio, Research, Publiions, and more). The site facilitates research and collaboration in academic endeavors.

AM-2014-Photosensitive Graphene Transistors__

2014-4-21 · AM-2014-Photosensitive Graphene Transistors_/__ |0|0 | AM-2014-Photosensitive Graphene

Silicon carbide - A high-transparency nonlinear …

Silicon carbide - A high-transparency nonlinear material for THz appliions Article in Optics Express 24(3):2590 · February 2016 with 136 Reads DOI: 10.1364/OE.24.002590

Terahertz Emitters and Detectors - Physics Department UCC

2013-1-7 · Terahertz Emitters and Detectors Martin Vaughan Optoelectronics Research Group – Spring Seminars 2008. Outline • High resistivity (to reduce dark current when bias applied) Typical materials: • Radiation damaged silicon on sapphire (RD-SOS) • Low temperature grown GaAs (LT …

List of semiconductor materials__

2016-4-6 · List of semiconductor materials___ 14| List of semiconductor materials___。List of

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2015-12-9 · W Han, S Fan, Q Li, W Liang, B Gu, D Yu,Continuous synthesis and characterization of silicon carbide nanorods, Chemical physics letters 265, 374-378,1997; . 17.

OSA | OE Issues In Progress

High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator. High Q-factor near infrared and visible Al 2 O 3-based parallel-plate capacitor kinetic inductance Improved electrode design for interdigitated large-area photoconductive terahertz emitters. Abhishek Singh, Malte Welsch, Stephan Winnerl

Publiions

2019-1-24 · Nonvolatile tunable silicon-carbide-based midinfrared thermal emitter enabled by phase-changing materials Wavelength-tunable mid-infrared thermal emitters with ) ,

Prof. Richard A. Soref Profile

Search the leading research in optics and photonics applied research from SPIE journals, conference proceedings and presentations, and eBooks

Phonon-Polaritonic Bowtie Nanoantennas: Controlling

2019-3-11 · A conventional thermal emitter exhibits a broad emission spectrum with a peak wavelength depending upon the operation temperature. Recently, narrowband thermal emission was realized with periodic gratings or single microstructures of polar crystals supporting distinct optical modes. Here, we exploit the coupling of adjacent phonon-polaritonic nanostructures, demonstrating experimentally that

Graphene Plasmon Cavities Made with Silicon Carbide …

2019-3-10 · We propose a simple way to create tunable plasmonic cavities in the infrared (IR) range using graphene films suspended upon a silicon carbide (SiC) grating and present a numerical investigation, using the finite element method, on the absorption properties and field distributions of such resonant structures. We find at certain frequencies within the SiC reststrahlen band that the structured

Terahertz spectroscopy and imaging – Modern …

Over the past three decades a new spectroscopic technique with unique possibilities has emerged. Based on coherent and time‐resolved detection of the electric field of ultrashort radiation bursts in the far‐infrared, this technique has become known as terahertz time‐domain spectroscopy (THz‐TDS).

Excitation of surface phonon polariton modes in gold

We demonstrate the excitation of surface phonon polaritons (SPhPs) in the mid-infrared (mid-IR) Reststrahlen band (10.288 μm-12.563 μm) on patterned surfaces with silicon carbide (SiC) substrate and gold (Au) gratings.The very large negative permittivity of Au limits its appliions in the mid-IR range, and to couple incident light to SPhPs modes, their momentum mismatch can be compensated

Terahertz wave generation and detection in double …

Terahertz wave generation and detection in double-graphene layered van der Waals heterostructures. Deepika This work highlights a novel strategy for the realization of efficient voltage-tunable terahertz emitters and detectors. Dean C R et al 2010 Boron nitride substrates for high-quality graphene electronics Nat. Nanotechnol. 5 722–6.

InAs wafer: 2017

2017-11-19 · Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, Researchers in Japan have developed a novel way of growing high quality

Silicon carbide for high-power appliions at MM …

The dielectric loss and refractive index in the monocrystal silicon carbide of the polytype 6H–SiC were studied in the 6–380 GHz frequency range and the 300–850 K temperature interval using high-quality resonator techniques.At low frequencies (f < 10 GHz), the loss tangent varies as 1/f.At high frequencies (f > 50 GHz), the loss increases with frequency.

OSA | OE Issues In Progress

High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator. High Q-factor near infrared and visible Al 2 O 3-based parallel-plate capacitor kinetic inductance Improved electrode design for interdigitated large-area photoconductive terahertz emitters. Abhishek Singh, Malte Welsch, Stephan Winnerl

US9870839B2 - Frequency- and amplitude-modulated …

When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. in the exemplary silicon carbide polar

Terahertz wave generation and detection in double …

Terahertz wave generation and detection in double-graphene layered van der Waals heterostructures. Deepika This work highlights a novel strategy for the realization of efficient voltage-tunable terahertz emitters and detectors. Dean C R et al 2010 Boron nitride substrates for high-quality graphene electronics Nat. Nanotechnol. 5 722–6.

Ultrabroadband Light Absorption by a Sawtooth …

2012-2-6 · We present an ultrabroadband thin-film infrared absorber made of sawtoothed anisotropic metamaterial. Absorptivity of higher than 95% at normal incidence is supported in a wide range of frequencies, where the full absorption width at half-maximum is about 86%. Such property is retained well at a very wide range of incident angles too. Light of shorter wavelengths are harvested at upper parts

silicon carbide Publiions | PubFacts

High quality graphene nanoribbons epitaxially grown on the sidewalls of silicon carbide (SiC) mesa structures stand as key building blocks for graphene-based nanoelectronics. Such ribbons display 1D single-channel ballistic transport at room temperature with exceptionally long mean free paths.

Prof. Can Bayram Profile

He has (co-) authored 44+ journal papers (h-index ≥ 22), 34+ conference proceeding papers, 2 book chapters, and has ≥ 47 patents issued/pending. For his achievements in ultraviolet-to-terahertz engineering of III-V semiconductor materials and devices, OSA, SPIE, and IEEE recognized him with senior meer status.

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